Latest news with #NTTInnovativeDevices
Business Wire
9 hours ago
- Business
- Business Wire
OKI and NTT Innovative Devices Establish Mass Production Technology for High-Power Terahertz Devices by Heterogeneous Material Bonding
TOKYO--(BUSINESS WIRE)--OKI (TOKYO: 6703) , in collaboration with NTT Innovative Devices Corporation (Headquarters: Kanagawa Prefecture; President & CEO: Hidehiro Tsukano; 'NTT Innovative Devices' hereinafter), has established mass production technology for high-power terahertz devices using crystal film bonding (CFB) (Note 1) technology for heterogeneous material bonding to bond indium phosphide (InP)-based uni-traveling carrier photodiodes (UTC-PD) (Note 2) onto silicon carbide (SiC) with excellent heat dissipation characteristics for improved bonding yields. Terahertz devices are anticipated to play a core technology role in supporting high-capacity low-latency communications for the next-generation 6G communication standard and high-precision non-destructive inspection for improved safety. Based on these results, both companies are working on product development, aiming to start mass production in FY2026. This co-creation work has established mass production technology for high-power terahertz devices and made real-world implementation a reality. Terahertz waves are electromagnetic waves in the range between radio waves and visible light, having both the penetrating characteristics of radio waves and the straight-line propagation of light. Due to their non-invasiveness (Note 3) to the living body, which is a problem with X-ray inspection technology, terahertz waves are anticipated to be developed for applications in fields including non-destructive inspection and security. In wireless communication applications, higher carrier frequencies contribute to increased communication capacity. On the other hand, terahertz waves have the drawback of being significantly attenuated in the atmosphere, creating the need for the development of high-power terahertz devices. Establishing mass production technologies is also essential to moving forward with real-world implementation. To address these challenges, NTT Innovative Devices has been working to improve the performances (output power, output spectrum and so on) of the UTC-photomixers (Note 4). Particularly in wireless communications, to propagate standard multilevel modulation signals (Note 5) over long distances, it is essential to achieve high output power at 1dB compression (Note 6). In order to achieve the high output power at 1dB compression, NTT Innovative Devices and a Japanese university team focused on the heat dissipation characteristics of the device and studied the technology of bonding InP-based UTC-PDs directly onto SiC with high heat dissipation characteristics (Note 7). It paved the way to realize UTC-photomixers offering an approximately ten-fold performance increase (the output power at 1dB compression exceeding 1 mW) compared to conventional devices. In wafer bonding, due to the large bonding area, even a minute bonding defect at one location can cause a bonding failure over a large area. Therefore, more advanced bonding technology is required for mass production. For UTC-PD on SiC chip, material cost (effective use of materials) is also a demanding improvement item, because the required InP area is less than 10% of the area in the chip. OKI applied CFB technology to divide the InP-based crystal films on the InP-based epitaxial wafers at the device level, selectively picking up only the portions necessary for device operation before bonding them to the SiC wafers by heterogeneous material bonding. CFB technology, OKI's proprietary heterogeneous material bonding technology developed in the printer market and refined about 20 years of mass production, has already established high yields. The process also offers high efficiency, since InP-based crystal films divided at the device level are bonded all together at wafer-size scales. The results of evaluating the yield of devices bonded using CFB technology show dramatically higher yields in the bonding process, with the bonding yield improving from approximately 50% to nearly 100% compared to conventional processes. Additionally, dividing the crystal films at the device level and selectively bonding the devices has made it possible to make effective use of the crystal films that were previously discarded with conventional processes, helping to reduce costs and environmental impact by improving material utilization efficiency. NTT Innovative Devices developed chips by forming UTC-PDs in the device process on SiC wafers with crystal films bonded using CFB technology. The results of device evaluations following chip development showed an output power at 1dB compression exceeding 1 mW in a single device, demonstrating high output and excellent linearity. Compared to devices produced using conventional bonding processes, dark current (Note 8) was reduced to approximately one-third, confirming that the process using CFB technology is capable of bonding while effectively maintaining the characteristics of InP-based crystal films. This co-creation work has established mass production technology for high-power terahertz devices and made real-world implementation a reality. Moving forward, both companies will build on the results of this joint research to start mass production of terahertz devices in FY2026 and strengthen collaboration with industry and academia to focus on commercializing 6G communication technologies and the broad application of non-destructive sensing technologies. Both companies will also draw on the jointly developed technology to accelerate efforts to contribute to a next-generation society, communicating to the world advanced technologies for both Japanese and global markets. NTT Innovative Devices will exhibit this technology at Laser World of Photonics 2025 (Hall B2.331) to be held in Munich, Germany from June 24 to 27, 2025. [Terminology] Note 1: crystal film bonding (CFB) Acronym for crystal film bonding. OKI's proprietary heterogeneous material bonding technology involving lifting off crystal films and bonding them to substrates or wafers made of different materials. Heterogeneous material bonding is characterized by direct bonding without using adhesives. Note 2: Uni-traveling carrier photodiode (UTC-PD) The uni-traveling-carrier photodiode (UTC-PD) is a kind of pin junction photodiode that selectively uses electrons as active carriers. UTC-PD could operate faster and with much wider output linearity simply by excluding the hole transport contribution to the diode operation. Note 3: Invasiveness The degree of physical burden imposed on a patient's or subject's body during treatment or examination. Note 4: UTC-Photomixer UTC photomixer is the name of the module that applies UTC-PD to RF (THz) signal generation. 2λ laser (frequency difference: THz) are injected into the photomixer, and optical beat generate THz wave. Introduction of UTC structure allows significant THz output improvement and extension to higher frequencies. Note 5: Multilevel modulation signal A modulation method used in digital communications whereby, unlike conventional binary (0 and 1) signals, 4-, 8-, or 16-level signals are used, allowing to carry more information per modulation Note 6: Output power at 1dB compression In general, it is one of the parameters of amplifier characteristics. As the input level to the amplifier increases, the output becomes saturated and deviates from the linear relationship. The output signal level at 1 dB below the linear relationship is called the 1 dB compression point. In the same way, in an ideal photomixer, the THz output signal is proportional to the input light level, but in high light input operation, this linear relationship deviates. Note 7: NTT Innovative Devices and a Japanese university team This result was based in part on research conducted by The University of Osaka, Kyushu University, and The University of Tokyo under commission from the National Institute of Information and Communications Technology (NICT), Japan; Beyond 5G R&D Promotion Program (JPJ012368C-00901). Note 8: Dark current Small current generated by a light receiving element in the absence of light. Since this constitutes unwanted noise, a lower dark current means improved device sensitivity. About Oki Electric Industry (OKI) Founded in 1881, OKI is Japan's leading information and telecommunication manufacturer. Headquartered in Tokyo, Japan, OKI provides top-quality products, technologies, and solutions to customers through its Public Solutions, Enterprise Solutions, Component Products, and Electronics Manufacturing Services businesses. Its various business divisions function synergistically to bring to market exciting new products and technologies that meet a wide range of customer needs in various sectors. Visit OKI's global website at Notes: - Oki Electric Industry Co., Ltd. is referred to as "OKI" in this document. - The names of the companies and products mentioned in this document are the trademarks or registered trademarks of the respective companies and organizations.
Business Wire
4 days ago
- Business
- Business Wire
Keysight, NTT, and NTT Innovative Devices Achieve 280 Gbps World Record Data Rate with Sub-Terahertz for 6G
SANTA ROSA, Calif.--(BUSINESS WIRE)-- Keysight Technologies, Inc. (NYSE: KEYS) in collaboration with NTT Corporation (NTT) and NTT Innovative Devices Corporation (NTT Innovative Devices), today announced a groundbreaking world record in data rate achieved using sub-THz frequencies. 1 This milestone was reached with Keysight's Vector Component Analyzer (VCA) in conjunction with NTT's and NTT Innovative Devices' high-output, wide-bandwidth J-band Indium Phosphide (InP)-based power amplifier (PA). In addition, advanced digital predistortion techniques were employed to mitigate amplifier non-linearities, ensuring robust, high-fidelity signal generation. The rapid advancement of 6G, AI, and autonomous driving technologies is driving a significant demand for wide bandwidth capabilities offered by sub-THz frequencies for high-speed wireless communication and precision radar sensing. Validating these systems with high-quality modulated signals is essential for development and deployment. However, achieving high-quality signals in the sub-THz range has been challenging due to the complexities of amplifying signals and managing distortion at higher power levels. The collaboration between Keysight, NTT, and NTT Innovative Devices successfully demonstrated the power amplifier's effectiveness in the 300-GHz frequency band. Testing confirmed its saturated power level at +9.1 dBm and achieved a 280 Gbps data rate (35 GBaud 256QAM) at 0 dBm power output — the highest data rate reported to date in the 300 GHz band. This significant achievement is largely attributed to Keysight's Vector Component Analyzer, built on the latest N524XB series PNA-X Microwave Network Analyzers equipped with digital predistortion techniques, which optimized signal integrity and minimized distortion to enable this unprecedented data transmission speed. Hirokazu Takenouchi, Vice President, Head of NTT Device Technology Laboratories, said: 'At NTT, we are consistently advancing the limits of carrier frequency and integration within radio systems. These developments are pushing the boundaries of what can be achieved in wireless communication systems. The test and measurement industry is crucial in meeting the complex characterization needs of our devices. We have collaborated closely with Keysight throughout our design and verification stages. Keysight consistently provides innovative solutions in both its software and hardware platforms.' Akimasa Kaneko, Executive Vice President of NTT Innovative Devices, Photonic Components Business Group, said: 'By utilizing our InP technology and collaborating with several partners, we have achieved a remarkable maximum throughput of 280 Gbps. This accomplishment marks a significant milestone in developing the broadest frequency bandwidth amplifier, enhancing energy efficiency and linearity, and addressing industry challenges.' Joe Rickert, Vice President and Head of Keysight's High Frequency Center of Excellence, said: 'This 280 Gbps world record underscores Keysight's commitment to providing the advanced test and measurement solutions critical for unlocking the potential of sub-THz frequencies for 6G. Our Vector Component Analyzer, coupled with our expertise in high-fidelity signal generation and distortion mitigation, is empowering industry leaders like NTT and NTT Innovative Devices to push the boundaries of wireless communication and realize the high-speed, high-reliability connectivity that will define the next generation of networks.' This achievement will be presented at the International Microwave Symposium (IMS) 2025 on June 19 th, 2025, at 10:10 am in room 211 in the Moscone Center, San Francisco, CA, USA. 1 Documentation of the record-breaking data rate was published in IEEE Xplore ® About Keysight Technologies At Keysight (NYSE: KEYS), we inspire and empower innovators to bring world-changing technologies to life. As an S&P 500 company, we're delivering market-leading design, emulation, and test solutions to help engineers develop and deploy faster, with less risk, throughout the entire product life cycle. We're a global innovation partner enabling customers in communications, industrial automation, aerospace and defense, automotive, semiconductor, and general electronics markets to accelerate innovation to connect and secure the world. Learn more at Keysight Newsroom and
